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650-GHz Resonant-Tunneling-Diode VCO With Wide Tuning Range Using Varactor Diode

机译:使用变容二极管的宽调谐范围的650GHz谐振隧道二极管VCO

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We fabricated a wide-range varactor-tuned terahertz oscillator using a resonant tunneling diode (RTD). An AlAs/InGaAs double-barrier RTD and a varactor-diode mesa were integrated into a 20-m-long slot antenna. A wide tuning range of % (70 GHz) of the center frequency of 655 GHz was achieved by changing the depletion-layer capacitance of the varactor diode with a dc sweep from −4 to 0.5 V. The dependence of the output power on the varactor-diode bias was also measured. These experimental results agreed well with theory.
机译:我们使用谐振隧穿二极管(RTD)制作了宽范围的变容二极管调谐的太赫兹振荡器。将AlAs / InGaAs双势垒RTD和变容二极管台面集成到20 m长的缝隙天线中。通过将直流扫描的−4 V更改为0.5 V来改变变容二极管的耗尽层电容,可以得到655 GHz中心频率的%(70 GHz)的宽调谐范围。输出功率对变容二极管的依赖性还测量了二极管偏置。这些实验结果与理论相吻合。

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