Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{scriptstyle {rm ON}}}=482~mu{rm A}/mu{rm m}$ at $I_{{scriptstyle {rm OFF}}}=100~{rm nA}/mu{rm m}$ and $V_{rm DD}=0.5~{rm V}$

摘要

We report raised source/drain (S/D) InAs quantum well MOSFETs incorporating a vertical spacer formed by metal–organic chemical vapor deposition epitaxial regrowth. By adopting a 12-nm-thick vertical spacer between the channel and the ${rm N}+{rm S}/{rm D}$ , off-state characteristics are significantly improved. A device with a 40-nm- $L_{g}$ and 12-nm-thick spacer shows 2.5- ${rm mS}/mu{rm m}$ peak transconductance $(g_{m})$ , 86-mV/decade subthreshold swing at $V_{DS}=0.5~{rm V}$ , 83-mV/V drain-induced barrier lowering, and 482- $mu{rm A}/mu{rm m}$ ON-current at 100- ${rm nA}/mu{rm m}$ OFF-current and $V_{DD}=0.5~{rm V}$ . In addition, a 3.0- ${rm mS}/mu{rm m}$ peak $g_{m}$ at $V_{DS}=0.5~{rm V}$ is achieved in an 18-nm- $L_{g}$ device with a 2-nm-thick spacer, the highest reported peak $g_{m}$ of any field-effect transistor.