Novel Defects-Trapping ${rm TaO}_{rm X}/{rm HfO}_{rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

摘要

The dependence of resistive switching of ${rm Ta}/{rm TaO}_{rm X}/{rm HfO}_{rm X}$ device governed by general filamentary or novel defects-trapping mechanism on the operation current is demonstrated in this letter. The device with stable resistive switching, high nonlinearity, and robust self-compliance ${sim}{rm 1}~mu{rm A}$ is demonstrated, which can be integrated in the vertical RRAM structure. Based on constant current density switching $({sim}{rm 10^{3}}~{rm A}/{rm cm}^{2})$ governed by defects-trapping transport, where the low and high resistance states attributed to the resistance of ${rm Ta}/{rm TaO}_{rm X}$ layer and device initial state, the switching current reduction by scaling down the cell size is proposed in transition metal oxide RRAM.