Al src='/images/tex/27635.gif' alt='x'> Ga_1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate

摘要

A low-temperature fabrication of AlGaN/GaN MISHEMTs on a 200-mm GaN-on-Si substrate using a common metal stack (Ti/Al/NiV) for concurrent source, drain, and gate formation is demonstrated. An ohmic contact resistance of 0.8 -mm and a specific contact resistivity of -cm are achieved at an annealing temperature of 500 °C. The fabricated MISHEMTs have excellent electrical characteristics: an ratio of nine decades (due to subnanoampere -state leakage current up to a −15 V gate bias), and a subthreshold swing of 80 mV/decade (by virtue of a relatively low AlGaN/GaN interface-trap density on the order of cmeV). The demonstrated approach is thus a promising alternative toward the gold-free GaN-on-Si integration.