首页> 外文期刊>Electron Device Letters, IEEE >Sezawa Propagation Mode in GaN on Si Surface Acoustic Wave Type Temperature Sensor Structures Operating at GHz Frequencies
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Sezawa Propagation Mode in GaN on Si Surface Acoustic Wave Type Temperature Sensor Structures Operating at GHz Frequencies

机译:GaN在基于GHz频率的Si表面声波型温度传感器结构上的Sezawa传播模式

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This letter investigates the applicability of Sezawa propagation mode for various GaN/Si surface acoustic wave (SAW) temperature sensor structures. First, different acoustic propagation modes in GaN on Si single SAW resonators, operating at GHz frequencies, were evaluated. The variation of the phase velocity versus the normalized thickness of the GaN layer is analyzed experimentally for different propagation modes, on the SAW structures manufactured using e-beam lithography. The different acoustic modes were also identified using finite-element method calculations. The effective coupling coefficients for the Sezawa mode are determined and show larger values than those obtained for the Rayleigh mode. The sensitivities obtained for the temperature sensor structures are 1.8 times higher for Sezawa than for the fundamental Rayleigh mode.
机译:这封信调查了Sezawa传播模式对各种GaN / Si表面声波(SAW)温度传感器结构的适用性。首先,评估了工作在GHz频率的Si单SAW谐振器中GaN中不同的声传播模式。在使用电子束光刻技术制造的SAW结构上,针对不同的传播模式,通过实验分析了相速度相对于GaN层归一化厚度的变化。还使用有限元方法计算确定了不同的声学模式。确定了Sezawa模式的有效耦合系数,并显示出比Rayleigh模式的有效耦合系数更大的值。对于Sezawa,温度传感器结构的灵敏度是基本Rayleigh模式的1.8倍。

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