GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors

摘要

The paper presents the manufacturing of GaN based single SAW resonator temperature sensing structures, having IDTs with fingers/interdigit spacing width within 200–120 nm range. “On wafer” hot plate resonance frequency vs. temperature measurements were performed in the 20–150°C temperature range. Further measurements have been performed in the −268−+150°C temperature range, using a cryostat setup. The sensitivities obtained demonstrate the advantage of GaN SAW resonators as temperature sensors.