Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

摘要

Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current–voltage plots, and the NVM devices are reprogrammable and stable up to s with a distinct ON/OFF ratio of . In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.