Ni(Ge1−<italic>x</italic>−<italic>y</italic>Si<italic>x</italic>Sn<italic>y</italic>) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07

Zheng Jun; Wang Suyuan; Zhang Xu; Liu Zhi; Xue Chunlai; Li CChuanbo; Zuo Yuhua; Cheng Buwen; Wang Qiming

首页> 外文期刊>Electron Device Letters, IEEE >Ni(Ge_1−x−ySi_xSn_y) Ohmic Contact Formation on p-type Ge_0.86Si_0.07Sn_0.07

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Ni(Ge_1−x−ySi_xSn_y) Ohmic Contact Formation on p-type Ge_0.86Si_0.07Sn_0.07

机译：Ni（Ge _{1− x - y Si _{x Sn _{< italic> y ）在p型Ge _{0.86 Si _{0.07 Sn _{0.07 上的欧姆接触形成}}}}}}

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摘要

A single-crystalline GeSiSn alloy was grown on double GeSn and Ge buffers on Si (100) using magnetron sputtering. The temperature-dependent contact resistivity ( of Ni/p-type GeSiSn structure was investigated in detail. Good ohmic contacts with of have been demonstrated on p-type GeSiSn after annealing at 350 °C. The low contact resistivity is attributed to the formation of Ni(GeSiSn) complex, and the hole Schottky barrier height of Ni(GeSiSn)/p-type GeSiSn is measured.

机译：使用磁控溅射在Si（100）的双GeSn和Ge缓冲层上生长单晶GeSiSn合金。详细研究了Ni / p型GeSiSn结构的随温度变化的接触电阻率。在350°C退火后的p型GeSiSn上已证明与的良好欧姆接触。低接触电阻率是由于形成了测定Ni（GeSiSn）配合物，测定Ni（GeSiSn）/ p型GeSiSn的空穴肖特基势垒高度。

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来源
《Electron Device Letters, IEEE》 |2015年第9期|878-880|共3页
作者
Zheng Jun; Wang Suyuan; Zhang Xu; Liu Zhi; Xue Chunlai; Li CChuanbo; Zuo Yuhua; Cheng Buwen; Wang Qiming;
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作者单位

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Contact resistivity; Germanium-Silicon-tin alloy (Ge1-x-ySixSny); Silicon photonics; germanium-silicon-tin alloy (Ge1???x???ySixSny); silicon photonics;

机译：接触电阻率;锗硅锡合金（Ge1-x-ySixSny）;硅光子学;锗硅锡合金（Ge1？x ??? ySixSny）;硅光子;

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Ni(Ge1−x−ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07

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Ni(Ge_1−x−ySi_xSn_y) Ohmic Contact Formation on p-type Ge_0.86Si_0.07Sn_0.07