Steep-Slope Metal–Insulator-Transition VO₂ Switches With Temperature-Stable High $I_{mathrm{{scriptscriptstyle ON}}}$

摘要

This letter reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal–insulator-transition (MIT) in vanadium dioxide devices. The reported devices are CMOS compatible two-terminal switches. We experimentally demonstrate for the first time the very little dependence on temperature of the steep slope of these switches, ranging from 0.24 mV/decade at room temperature, to 0.38 mV/decade at 50 °C. The fabricated devices show excellent ON-state conduction, with mA/ or , for the whole range of investigated temperatures (from room temperature to the MIT transition temperature), which recommends them as future candidates for steep-slope, highly conductive, and temperature-stable switches.