Simulation-Based Study of the Inserted-Oxide FinFET for Future Low-Power System-on-Chip Applications

摘要

The performance of an evolutionary FinFET design (iFinFET) is compared against that of the bulk FinFET and gate-all-around (GAA) FET via TCAD three-dimensional device simulations. The results show that the iFinFET is a promising candidate for future low-power system-on-chip applications, providing superior electrostatic integrity relative to the FinFET without the additional process complexity and substantial gate capacitance penalty of the GAA FET.