L $_{mathrm {g}} = 80$ -nm Trigate Quantum-Well In_0.53Ga_0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al₂O₃/HfO₂ Gate-Stack

摘要

We report on L = 80-nm trigate quantumwell InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with record combination of subthreshold swing, transconductance and ON-current performance. The device features a multilayer cap design, bilayer AlO/HfO (0.7/2 nm) gate-stack by atomic layer deposition and dry etched InGaAs fin. An L = 80-nm trigate MOSFET with fin-width (W) = 30 nm and fin-height (H) = 20 nm exhibits excellent performance, such as ON-resistance (RON) = 220 Ω-μm, subthreshold swing (S) = 82 mV/dec, and drain-induced-barrier lowering = 10 mV/V at V = 0.5 V. Besides, the device exhibits record values of maximum transconductance (g) = 1800 μS/μm and I = 0.41 mA/μm at V = 0.5 V, and a record combination of g and S in any III-V nonplanar MOSFET technology.