First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

摘要

This letter provides the first direct experimental detection of single-electron charging of the floating gate of a mainstream Flash memory cell. The detection is shown to be easily achievable through conventional and very simple measurement techniques on state-of-the-art technologies. Results represent a milestone for the investigation of the physics of Flash memory operation, opening the possibility for direct analyses of the piling up of single electrons in the floating gate during cell programming.