Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

摘要

We present a new fully self-aligned single-electron memory with a single pairof nano floating gates, made of different materials (Si and Ge). The energybarrier that prevents stored charge leakage is induced not only by quantumeffects but also by the conduction-band offset that arises between Ge and Si.The dimension and position of each floating gate are well defined andcontrolled. The devices exhibit a long retention time and single-electroninjection at room temperature.