All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices

摘要

We demonstrate all inorganic, robust, cost-effective, spin-coated, two-terminal capacitive memory metal–oxide nanoparticle-oxide–semiconductor devices with cadmium telluride nanoparticles sandwiched between aluminum oxide phosphate layers to form the dielectric memory stack. Using a novel high-speed circuit to decouple reading and writing, experimentally measured memory windows, programming voltages, retention times, and endurance are comparable with or better than the two-terminal memory devices realized using other fabrication techniques.