Compatibility of AlN/SiN_x Passivation With LPCVD-SiN_x Gate Dielectric in GaN-Based MIS-HEMT

摘要

In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiN passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiN gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiN passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780 °C during the LPCVD-SiN deposition. The AlN/SiN passivation is shown to be significantly better than the LPCVD-SiN passivation by delivering small dynamic degradation, especially under high drain bias switching with V.