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AlN Lamb Wave Resonators on a Flexible Substrate

机译:柔性基板上的AlN Lamb波谐振器

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摘要

We report on Lamb wave resonators (LWRs) on a flexible substrate made of polyethylene terephthalate (PET) by transferring method. LWRs with three different topologies were fabricated on the same silicon wafer and then were transferred simultaneously to a flexible substrate with air cavities using a polydimethylsiloxane stamp. The resonators were aligned accurately with the air cavities on the PET, and presented equivalent performance to those on the silicon wafer. The flexible resonator implementing thickness field excitation exhibited a quality factor of 1294 and a coupling coefficient of 2.2%. The flexible two-port resonator presented a low insertion loss of 3.8 dB. The resonator demonstrated excellent mechanical stability under a series of deformations. These results pave the way for flexible electronic filters and oscillators in future wearable electronic systems.
机译:我们通过转移方法报道了由聚对苯二甲酸乙二醇酯(PET)制成的柔性基板上的兰姆波谐振器(LWR)。具有三种不同拓扑的LWR在同一块硅晶片上制造,然后使用聚二甲基硅氧烷压模同时转移到具有气孔的柔性基板上。谐振器与PET上的气腔精确对准,并表现出与硅晶片相同的性能。实施厚度场激励的柔性谐振器的品质因数为1294,耦合系数为2.2%。灵活的两端口谐振器具有3.8 dB的低插入损耗。该谐振器在一系列变形下表现出出色的机械稳定性。这些结果为将来的可穿戴电子系统中的柔性电子滤波器和振荡器铺平了道路。

著录项

  • 来源
    《IEEE Electron Device Letters》 |2017年第8期|1125-1127|共3页
  • 作者单位

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

    State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Substrates; Silicon; Aluminum nitride; III-V semiconductor materials; Cavity resonators; Electrodes;

    机译:基板;硅;氮化铝;III-V族半导体材料;腔谐振器;电极;

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