A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High text{I}_{mathrm {ON}}/text{I}_{mathrm {OFF}} Ratio

摘要

In this letter, a novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized for the first time, which can effectively suppress the subthreshold slope (SS) degradation without leakage current increase through self-adaptively current replenishing with bandgap engineering, greatly alleviating the critical issue of high average SS in conventional TFETs. Based on CMOS-compatible technology, the fabricated HS-TFETs of vertically stacked Si-Si1-xGex source can experimentally achieve superior performance with nearly constant SS over five decades of drain current, high Ion (~14μA/μm @ VDS = -1 V), and large Ion/Ioff ratio (~107). The proposed device with high process compatibility shows great potentials for future ultra-low power applications.