机译:跨导电流比(g_ {mathrm {m}} / I_ {mathrm {ds}})作为隧道FET生物传感器的传感指标的适用性
Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore, India;
Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore, India;
Molecular biophysics; Logic gates; Cavity resonators; TFETs; Biosensors; Dielectrics;
机译:使用
机译:通过自适应带隙工程设计的新颖隧道FET设计,具有超过5个电流和高文本{I} _ {mathrm {ON}} / text {I} _ {mathrm {OFF}}比率的恒定亚阈值斜率
机译:为<直列式ID = “IEq1”> <替代>纠缠熵
机译:体效应对应变
机译:在低于5 nm的硅纳米线光刻中的量子限制效应和si纳米栅FET生物传感器的集成。
机译:评估胎儿MEG信号的复杂性:不同指标的比较及其适用性
机译:生产横截面的比率乘以$ B ^ {\ pm} _ {\ mathrm {c}} \与J \ psi {\ pi} ^ {\ pm} $和$ B ^ {\ pm } _ {\ mathrm {c}} \至J \ psi K ^ {\ pm} $和$ \ mathrm {\ mathcal {B}} \ left({\ mathrm {B}} _ {\ mathrm {c}} ^ {\ pm} \ to \ mathrm {J} / \ psi {\ pi} ^ {\ pm} {\ pi} ^ {\ pm} {\ pi} ^ {\ mp} \ right)/ \ mathrm {\ mathcal {B}} \ left({\ mathrm {B}} _ {\ mathrm {c}} ^ {\ pm} \至\ mathrm {J} / \ psi {\ pi} ^ {\ pm} \ right)在$ \ sqrt {s} = 7 $ TeV的pp碰撞中的$