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Applicability of Transconductance-to-Current Ratio ( g_{mathrm {m}}/I_{mathrm {ds}} ) as a Sensing Metric for Tunnel FET Biosensors

机译:跨导电流比(g_ {mathrm {m}} / I_ {mathrm {ds}})作为隧道FET生物传感器的传感指标的适用性

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In this paper, we propose and evaluate the feasibility of transconductance-to-current ratio (gm/Ids) as a sensing metric for a tunnel field-effect transistor (TFET)-based dielectric modulated biosensor. Focusing on the enhancement of the values of gm/Ids and current ratio at lower current levels to signify the presence of biomolecules in the dielectric cavity of TFET biosensor, the metric can be used not only for sensitivity but also for selectivity as the current ratio changes appreciably for the three different types of biomolecules, namely, Streptavidin, Biotin, and APTES. The gm/Ids extraction takes into account the operation at low power consumption, i.e., in the subthreshold region, which is most sensitive for biomolecule detection. The sensing methodology is governed by the location of the biomolecules within the cavity, and is less dependent on the fill-in factor. This paper highlights new opportunities to identify the sensing metric in TFET-based dielectric modulated biosensors.
机译:在本文中,我们提出并评估了跨导电流比(gm / Ids)作为基于隧道场效应晶体管(TFET)的介电调制生物传感器的检测指标的可行性。着重于在较低电流水平下提高gm / Ids值和电流比以表示TFET生物传感器的介电腔中存在生物分子时,该度量不仅可用于灵敏度,而且还可用于随着电流比的变化而进行选择性对于三种不同类型的生物分子,即链霉抗生物素蛋白,生物素和APTES,具有明显的意义。 gm / Ids提取考虑了低功耗操作,即在亚阈值区域内的操作,这对于生物分子检测最为敏感。传感方法受腔内生物分子的位置控制,而对填充因子的依赖性较小。本文重点介绍了在基于TFET的介电调制生物传感器中识别传感指标的新机会。

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