Neuromorphic Simulation of Proton Conductors Laterally Coupled Oxide-Based Transistors With Multiple in-Plane Gates

摘要

Oxide-based electric-double-layer (EDL) transistors were reported to be promising candidates for artificial synapseseurons. In this letter, a behavioral model of neuromorphic device based on a proton conducting electrolyte laterally coupled oxide-based EDL transistor is developed by integrating charge accumulation/relaxation processes and the classical field-effect transistor characteristics. The device model can reproduce both dc behaviors and the dynamic synaptic functions. Some complex neuromorphic functions, such as neural network classifications can be realized by introducing such device model into circuit simulations. Our results are interesting for the hardware implementation of neuromorphic systems.