...
机译:基于互补切换机制的3位电阻RAM读写方案
Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, Aachen, Germany;
Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, Aachen, Germany;
Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, Aachen, Germany;
Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, Aachen, Germany;
Peter Grünberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany;
Switches; Resistance; Voltage measurement; Electrical resistance measurement; Electrodes; Pulse measurements; Writing;
机译:场和温度在$ {rm Hf} / {rm HfO} _ {2} $电阻型RAM单元中触发ON / OFF切换机制中的互补作用
机译:基于PANI的互补电阻开关:AG对物理性质和切换机制的影响
机译:基于氮化锆的电阻切换存储单元中观察到的双极电阻切换现象和电阻切换机制
机译:基于NIO Unipolar开关电阻随机存取存储器(RRAM)的不规则电阻开关特性及其机制
机译:基于开关过程的建模控制非易失性铪 - 氧化物电阻开关存储器的变异性
机译:高保留退火的基于MgO的电阻开关存储器件的传导机制
机译:基于钽氧化物电阻的互补电阻转换 内存设备