PAni-based complementary resistive switches: the effects of Ag on physical properties and switching mechanism

摘要

In this work, single-layered memristors were fabricated with a simple structure based on polyaniline (PAni), and the effect of different concentrations of silver was investigated. Structural analyses confirmed the successful formation of the emer-aldine salt (ES) form of PAni as well as the presence of silver in composite samples. In these memristors, a simultaneous protonation/deprotonation process occurred under the influence of applying the electric field that as a new mechanism led to the forming-free complementary resistive switching (CRS) behavior. It was observed that the presence of silver affected not only the switching mechanism, but also the current-voltage (Ⅰ-Ⅴ) characteristic of memristor. Accordingly, at the highest concentration, silver changed its behavior from the non-Ohmic to the Ohmic one, thereby reducing the operating voltages of composite devices. Additionally, the retention time and endurance characteristics for 4000 s and 1000 consecutive cycles did not change significantly, indicating the stability of the memristors.