Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna

摘要

A novel diamond Schottky barrier diode (SBD) with H-terminated surface exposed to NO2 gas is fabricated toward high power rectifying antenna (rectenna). The double NO2 exposures are introduced to provide high concentration of 2-D hole gas at the diamond surface. Experimentally, our SBDs have shown to give good rectifier properties with the high current density of 24 A/cm2 at a forward voltage of -2 V. A dual diode rectifier circuit using two diamond SBDs was designed with diode model constructed from experimental I-V curves. Values of circuit components such as dc block capacitance and load resistance were selected to achieve larger output voltage. Experimentally RF to dc conversion is demonstrated, where RF input voltage with 10 MHz and the amplitude of 9 V was converted into a dc output voltage as large as 4.2 V.