A Novel One-Transistor Active Pixel Sensor With Tunable Sensitivity

摘要

In this work, we demonstrate a novel one-transistor active pixel sensor (1T-APS) with tunable sensitivity using 22 nm FD-SOI technology. With various pixel length (LP) and active region length (LA), extra control gates are introduced to modulate the effective LA and the photoelectron distribution under the buried oxide layer/substrate interface. With the shorter effective LA, the higher photoelectron concentration is revealed, leading to the higher sensitivity. A sensitivity increase up to 42.28% is obtained with the largest LP/LA ratio. The tunable sensitivity and extremely compact structure make the device very promising for high-dynamic-range imaging applications with a higher resolution and a larger fill factor.