An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC

摘要

This letter proposes an enhancement mode MOSFET on GaN-on-silicon LED epitaxial wafer for the first time. The fabrication processes of the MOSFET are fully compatible with InGaN/GaN multiple-quantum-wells (MQWs) diode and include no ion implantation or additional epitaxial growth. Gate-recess structure is formed by well-controlled etching to define the channel area. The bottom and side wall of the recess are fully covered by the gate metal to improve the control ability of gate voltage on the channel conductance. The measurement results indicate acceptable performance of the MOSFET with threshold voltage of 6.01 V. Finally, the MOSFET is serially connected with an LED based on the same platform and the brightness of LED can be effectively controlled by the gate voltage according to the experimental results. Therefore the MOSFET and LED have been fabricated on the same GaN-on-silicon platform, which paves way for the monolithic optical electronic integrated circuit (OEIC).