Design and Fabrication of Super Junction MOSFET for Industrial Applications

摘要

In Super Junction (SJ) MOSFET, Charge Balance is the most important issue of Trench filling SJ fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance condition. In this paper, two method of the fabrication process are used in Charge Balance condition, Trench angle decreasing and Bottom implantation process. Smaller on-resistance can be achieved using lower trench angle. And higher Breakdown voltage can be achieved using Bottom implantation process. Electrical characteristics of manufactured discrete device chip are compared to that of device which is designed of TCAD simulation.