Fundamental characteristics of the illminating light source using white light-emitting diodes based on InGaN semiconductors

摘要

We describe for the first time the basic illumination characteristics of lighting source using 10 cd-class InGaN-based LEDs (an efficacy of 15lm/W) under a driving condition of Ac 100V at 60Hz. Several hundred white LEDs with series connections were arrayed on a glass epoxy substrate and were driven by adjusting a current of less than 20mA under the AC 100V. The dependence of temperature and injection current on both the emission spectra and intensity were measured. The white LED array indicates distinct two electroluminescence peaks at 460and 555nm at room temperature, which are related to the recombination emissions from the InGaN MQW blue LED and from the YAG: Ce phosphor, respectively.