HEMT Transistors and MMIC Enhance S-Band Radar Applications

摘要

Cree released a family of packaged GaN HEMT power transistors and high power amplifier MMIC in the 2.7 to 3.5 GHz range (S-Band) with typical efficiencies of 60%. The CGH31240F and CGH35240F S-Band transistors are internally matched to 50 ohms with a saturated RF output power of 240W from 2.7 to 3.1 GHz and 3.1 to 3.5 GHz, respectively. The CMPA2735075F two-stage GaN HEMT high power MMIC amplifier has a saturated RF output power of 75W from 2.7 to 3.5 GHz with a power gain of 20dB.