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Mid-infrared characterization of thiophene-based thin polymer films

机译:噻吩基聚合物薄膜的中红外表征

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摘要

Optical properties of seven regioregular poly(3-alkylthiophene) with different alkyl side chain lengths which are poly(3-butylthiophene-2,5-diyl) (P3BT), poly(3-pentylthiophene-2,5-diyl) (P3PT), poly(3-hex-ylthiophene-2,5-diyl) (P3HT), poly(3-heptylthiophene-2,5-diyl) (P3hept), poly(3-octylthiophene-2,5-diyl) (P3OT), poly(3-decylthiophene-2,5-diyl) (P3DT), and poly(3-dodecylthiophene-2,5-diyl) (P3DDT) have been studied in the mid-infrared (IR) spectral region by means of Fourier Transformation Infrared (FTIR) spectroscopy and IR spectroscopic ellipsometry (IRSE). Absorbance spectra obtained in this fingerprint region are potential to characterize the structures formed by organic molecules in thin films due to molecular vibrations in detail. In consequence, the vibrational absorption bands of these seven samples demonstrated that P3PT, P3HT, and P3hept exhibited very similar band profiles, in contrast, the stretching vibration of thiophene rings (≈1465 cm~(-1): C=C) underwent a blue shift in P3BT, P3OT, P3DT and P3DDT. The highest value of the real part (ε_1) of the complex dielectric constant was obtained from P3HT on both indium thin oxide (ITO) and silicon (Si) substrates whereas the imaginary part (ε_2) was directly affected by increasing in the alkyl side chain lengths in a frequency range around 3000 cm~(-1). The optical properties of P3PT in the mid-IR region developed an affinity with those of P3HT. Thus, P3PT is particularly a suitable polymer active material candidate for high-performance devices.
机译:七个具有不同烷基侧链长度的区域规则聚(3-烷基噻吩)的光学性质为聚(3-丁基噻吩-2,5-二基)(P3BT),聚(3-戊基噻吩-2,5-二基)(P3PT) ,聚(3-己基噻吩-2,5-二基)(P3HT),聚(3-庚基噻吩-2,5-二基)(P3hept),聚(3-辛基噻吩-2,5-二基)(P3OT) ,傅立叶研究在中红外(IR)光谱区域研究了聚(3-癸基噻吩-2,5-二基)(P3DT)和聚(3-十二烷基噻吩-2,5-二基)(P3DDT)变换红外(FTIR)光谱和红外光谱椭偏仪(IRSE)。在该指纹区域中获得的吸收光谱潜在地表征了由于分子振动而由薄膜中的有机分子形成的结构。结果,这七个样品的振动吸收带表明P3PT,P3HT和P3hept表现出非常相似的能带分布,相反,噻吩环的拉伸振动(≈1465cm〜(-1):C = C)经历了P3BT,P3OT,P3DT和P3DDT中出现蓝移。复数介电常数的实部(ε_1)的最大值是从P3HT在铟薄氧化物(ITO)和硅(Si)衬底上获得的,而虚部(ε_2)受烷基侧链增加的直接影响在大约3000 cm〜(-1)的频率范围内的长度。 P3PT在中红外区域的光学性质与P3HT的光学性质形成亲和力。因此,P3PT特别适合用作高性能器件的聚合物活性材料。

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