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Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment

机译:微波等离子体处理后溅射涂层Fe3Si薄膜的物理性质

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Fe3Si films are deposited onto the Si(111) wafer using sputtering with parallel facing targets. Surface modification of the deposited Fe3Si film is conducted by using a microwave plasma treatment under an Ar atmosphere at different powers of 50, 100 and, 150 W. After the Ar plasma treatment, the crystallinity of the coated Fe3Si films is enhanced, in which the orientation peaks, including (220), (222), (400), and (422) of the Fe3Si are sharpened. The extinction rule suggests that the B2–Fe3Si crystallites are the film’s dominant composition. The stoichiometry of the Fe3Si surfaces is marginally changed after the treatment. An increase in microwave power damages the surface of the Fe3Si films, resulting in the generation of small pinholes. The roughness of the Fe3Si films after being treated at 150 W is insignificantly increased compared to the untreated films. The untreated Fe3Si films have a hydrophobic surface with an average contact angle of 101.70°. After treatment at 150 W, it turns into a hydrophilic surface with an average contact angle of 67.05° because of the reduction in the hydrophobic carbon group and the increase in the hydrophilic oxide group. The hardness of the untreated Fe3Si is ~9.39 GPa, which is kept at a similar level throughout each treatment power.
机译:使用具有平行面向目标的溅射将Fe3Si薄膜沉积在Si(111)晶片上。通过在AR气氛下在50,100和150W的不同功率下使用微波等离子体处理来进行沉积Fe3Si膜的表面改性。在AR等离子体处理之后,涂覆的Fe3Si膜的结晶度提高,其中Fe3Si的定向峰值,包括(220),(222),(400)和(422)的锐化。灭绝规则表明B2-FE3SI微晶是薄膜的主要组合物。治疗后Fe3Si表面的化学计量略微改变。微波功率的增加损坏了Fe3SI薄膜的表面,导致产生小针孔。与未处理的薄膜相比,在150W处理后对150W处理后的Fe3Si膜的粗糙度微不足道。未处理的Fe3Si薄膜具有疏水表面,平均接触角为101.70°。在150W下处理后,由于疏水性碳基团的还原和亲水氧化物基团的增加,它转化为307.05°的平均接触角的亲水性表面。未处理的Fe3Si的硬度为约9.39GPa,在每个治疗能力中保持在相似的水平。

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