Interface and optical properties of Zn1?xMgxO films with Mg content of more than 70% grown on the (12?10)-ZnO substrates

摘要

Fabricating Zn 1? x Mg x O films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn 1? x Mg x O films on (1 2 ? 10)-ZnO substrates by molecular beam epitaxy. The Zn 1? x Mg x O/(1 2 ? 10)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6?eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn 1? x Mg x O films.