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首页> 外文期刊>Scientific reports. >Superconductivity in HfTe5 across weak to strong topological insulator transition induced via pressures
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Superconductivity in HfTe5 across weak to strong topological insulator transition induced via pressures

机译:通过压力引起的HFTe5弱弱拓扑绝缘体过渡的超导

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Recently, theoretical studies show that layered HfTe5 is at the boundary of weak & strong topological insulator (TI) and might crossover to a Dirac semimetal state by changing lattice parameters. The topological properties of 3D stacked HfTe5 are expected hence to be sensitive to pressures tuning. Here, we report pressure induced phase evolution in both electronic & crystal structures for HfTe5 with a culmination of pressure induced superconductivity. Our experiments indicated that the temperature for anomaly resistance peak (Tp) due to Lifshitz transition decreases first before climbs up to a maximum with pressure while the Tp minimum corresponds to the transition from a weak TI to strong TI. The HfTe5 crystal becomes superconductive above ~5.5?GPa where the Tp reaches maximum. The highest superconducting transition temperature (Tc) around 5?K was achieved at 20?GPa. Crystal structure studies indicate that HfTe5 transforms from a Cmcm phase across a monoclinic C2/m phase then to a P-1 phase with increasing pressure. Based on transport, structure studies a comprehensive phase diagram of HfTe5 is constructed as function of pressure. The work provides valuable experimental insights into the evolution on how to proceed from a weak TI precursor across a strong TI to superconductors.
机译:最近,理论研究表明,层状的HFTE5位于弱和强拓扑绝缘体(Ti)的边界处,并且可以通过改变晶格参数来交叉于DIDAC半态。预计3D堆叠HFTE5的拓扑特性是对压力调谐敏感。这里,我们报告了HFTe5的电子和晶体结构中的压力诱导的相位演化,并锐化了压力诱导的超导导。我们的实验表明,由于Lifshitz过渡引起的异常电阻峰(TP)的温度首先降低,然后在升高到最大压力之前,而TP最小对应于从弱Ti到强Ti的转变。 HFTE5晶体变为高于〜5.5≤GPA的超导,TP达到最大值。最高的超导转变温度(Tc)在20μlmO2℃下实现。晶体结构研究表明,HFTE5从单斜晶型C2 / M相的CMCM相转变为P-1相位,随着压力的增加。基于运输,结构研究将HFTe5的综合相图构造为压力的函数。该作品为如何从强大的TI跨越超导体进行的弱TI前兆来提供有价值的实验见解。

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