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Pressure-induced superconductivity and topological quantum phase transitions in a quasi-one-dimensional topological insulator: Bi 4 I 4

机译:准一维拓扑绝缘体中的压力诱导超导和拓扑量子相变:Bi 4 I 4

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Superconductivity and topological quantum states are two frontier fields of research in modern condensed matter physics. The realization of superconductivity in topological materials is highly desired; however, superconductivity in such materials is typically limited to two-dimensional or three-dimensional materials and is far from being thoroughly investigated. In this work, we boost the electronic properties of the quasi-one-dimensional topological insulator bismuth iodide β-Bi4I4 by applying high pressure. Superconductivity is observed in β-Bi4I4 for pressures, where the temperature dependence of the resistivity changes from a semiconducting-like behavior to that of a normal metal. The superconducting transition temperature Tc increases with applied pressure and reaches a maximum value of 6 K at 23 GPa, followed by a slow decrease. Our theoretical calculations suggest the presence of multiple pressure-induced topological quantum phase transitions as well as a structural–electronic instability.
机译:超导电性和拓扑量子态是现代凝聚态物理研究的两个前沿领域。高度希望在拓扑材料中实现超导性。然而,这种材料中的超导性通常仅限于二维或三维材料,远未得到彻底研究。在这项工作中,我们通过施加高压来提高准一维拓扑绝缘体碘化铋β-Bi4I4的电子性能。在β-Bi4I4的压力中观察到超导性,其中电阻率的温度依赖性从类似半导体的行为变为普通金属的行为。超导转变温度Tc随着施加的压力而增加,在23 GPa时达到最大值6 K,然后缓慢降低。我们的理论计算表明存在多个压力诱导的拓扑量子相变以及结构-电子不稳定性。

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