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Transition between strong and weak topological insulator in ZrTe5 and HfTe5

机译:Zrte5和HFTE5强与弱拓扑绝缘子之间的过渡

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ZrTe5 and HfTe5 have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topolog-ical nature. Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe5 or HfTe5 has a band gap or not is still a question. Here, we present detailed first-principles calculations on the electronic and topological prop-erties of ZrTe5 and HfTe5 on variant volumes and clearly demonstrate the topological phase transition from a strong TI, going through an intermediate Dirac semi-metal state, then to a weak TI when the crystal expands. Our work might give a unified explain about the divergent experimental results and propose the crucial clue to further experiments to elucidate the topological nature of these materials.
机译:Zrte5和HFTe5最近引起了越来越关注的,自拓扑绝缘体(TIS)。然而,随后的作品展示了对他们的拓扑性质的许多矛盾。在不同的实验中,在不同的实验中观察到三个可能的相位,即强Ti,弱Ti和Dirac半金属。基本上是Zrte5或Hfte5具有频带隙,还是仍然是一个问题。在这里,我们对Zrte5和HFTe5的电子和拓扑支出的详细的第一原理计算在变型体积上,并且清楚地证明了从强TI的拓扑相转变,通过中间狄拉克半金属状态,然后弱Ti当晶体膨胀时。我们的工作可能会统一解释关于发散的实验结果,并提出了重要的线索进一步实验,以阐明这些材料的拓扑性质。

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