首页> 美国卫生研究院文献>Scientific Reports >Transition between strong and weak topological insulator in ZrTe5 and HfTe5
【2h】

Transition between strong and weak topological insulator in ZrTe5 and HfTe5

机译:ZrTe5和HfTe5中强拓扑绝缘体和弱拓扑绝缘体之间的过渡

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

ZrTe5 and HfTe5 have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topolog-ical nature. Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe5 or HfTe5 has a band gap or not is still a question. Here, we present detailed first-principles calculations on the electronic and topological prop-erties of ZrTe5 and HfTe5 on variant volumes and clearly demonstrate the topological phase transition from a strong TI, going through an intermediate Dirac semi-metal state, then to a weak TI when the crystal expands. Our work might give a unified explain about the divergent experimental results and propose the crucial clue to further experiments to elucidate the topological nature of these materials.
机译:自从理论上预测是拓扑绝缘体(TI)以来,ZrTe5和HfTe5最近引起了越来越多的关注。但是,随后的作品在其拓扑学性质上显示出许多矛盾。迄今为止,在不同的实验中已经观察到三个可能的阶段,即强TI,弱TI和Dirac半金属。从本质上讲,ZrTe5或HfTe5是否具有带隙仍然是一个问题。在这里,我们介绍了ZrTe5和HfTe5在不同体积上的电子和拓扑性质的详细第一性原理计算,并清楚地说明了拓扑相从强TI过渡到中间狄拉克半金属态再到弱晶体膨胀时的TI。我们的工作可能会对不同的实验结果给出统一的解释,并为进一步实验阐明这些材料的拓扑性质提供关键线索。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号