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Superconductivity in HfTe5 across weak to strong topological insulator transition induced via pressures

机译:HfTe5在通过压力引起的从弱到强拓扑绝缘子过渡过程中的超导性

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摘要

Recently, theoretical studies show that layered HfTe5 is at the boundary of weak & strong topological insulator (TI) and might crossover to a Dirac semimetal state by changing lattice parameters. The topological properties of 3D stacked HfTe5 are expected hence to be sensitive to pressures tuning. Here, we report pressure induced phase evolution in both electronic & crystal structures for HfTe5 with a culmination of pressure induced superconductivity. Our experiments indicated that the temperature for anomaly resistance peak (Tp) due to Lifshitz transition decreases first before climbs up to a maximum with pressure while the Tp minimum corresponds to the transition from a weak TI to strong TI. The HfTe5 crystal becomes superconductive above ~5.5 GPa where the Tp reaches maximum. The highest superconducting transition temperature (Tc) around 5 K was achieved at 20 GPa. Crystal structure studies indicate that HfTe5 transforms from a Cmcm phase across a monoclinic C2/m phase then to a P-1 phase with increasing pressure. Based on transport, structure studies a comprehensive phase diagram of HfTe5 is constructed as function of pressure. The work provides valuable experimental insights into the evolution on how to proceed from a weak TI precursor across a strong TI to superconductors.
机译:最近,理论研究表明,层状HfTe5位于弱拓扑绝缘体(TI)的边界,并且可能通过更改晶格参数而转变为Dirac半金属态。预期3D堆叠HfTe5的拓扑属性因此对压力调整敏感。在这里,我们报道了HfTe5在电子和晶体结构中的压力诱导相演化,以及压力诱导超导作用的顶点。我们的实验表明,由于Lifshitz跃迁而导致的异常电阻峰值(Tp)的温度先下降,然后随压力升至最大值,而Tp最小值对应于从弱TI到强TI的跃迁。 HfTe5晶体在〜5.5 GPa以上变为超导,此时Tp达到最大值。在20 GPa时达到了约5 K的最高超导转变温度(Tc)。晶体结构研究表明,随着压力的升高,HfTe5从Cmcm相转变为单斜C2 / m相,然后转变为P-1相。基于运输,结构研究,构建了HfTe5的综合相图,该图是压力的函数。这项工作提供了宝贵的实验见解,可帮助您了解如何从弱TI前驱物跨过强TI过渡到超导体。

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