Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure

摘要

The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emitting p-n junction for a light-emitting transistor based on p-InGaN – n-AlGaN heterostructure have been investigated.