Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

摘要

Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors was measured at room and elevated temperatures as function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noises were observed. The Hooge parameter, α, was estimated to be close to 1 x 10~(-3). The activation energy for observed g-r noise was found to be E_a ～1.6 eV (the largest reported activation energy for GaN based devices). The measurements also confirmed that the double heterostructure provided superior carrier confinement in 2D channel even at high carrier concentrations.