...
首页> 外文期刊>Polymers >Effects of Solvent Vapor Annealing on Morphology and Charge Transport of Poly(3-hexylthiophene) (P3HT) Films Incorporated with Preformed P3HT Nanowires
【24h】

Effects of Solvent Vapor Annealing on Morphology and Charge Transport of Poly(3-hexylthiophene) (P3HT) Films Incorporated with Preformed P3HT Nanowires

机译:溶剂蒸汽退火对掺入预成型P3HT纳米线的聚(3-己基噻吩)(P3HT)薄膜形态和电荷输送的影响

获取原文
   

获取外文期刊封面封底 >>

       

摘要

We systematically studied the influence of solvent vapor annealing on the molecular ordering, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) thin films embedded with preformed crystalline P3HT nanowires (NWs). Solvent vapor annealing (SVA) with chloroform (CF) was found to profoundly impact on the structural and morphological changes, and thus on the charge transport characteristics, of the P3HT-NW-embedded P3HT films. With increased annealing time, the density of crystalline P3HT NWs was increased within the resultant films, and also intra- and intermolecular interactions of the corresponding films were significantly improved. As a result, the P3HT-NW-embedded P3HT films annealed with CF vapor for 20 min resulted in a maximized charge carrier mobility of ~0.102 cm 2 V ?1 s ?1 , which is higher than that of pristine P3HT films by 4.4-fold (μ = ~0.023 cm 2 V ?1 s ?1 ).
机译:我们系统地研究了溶剂蒸汽退火对聚(3-己基烯烯)(P3HT)薄膜的分子排序,形态和电荷运输性能的影响,其嵌入具有预先形成的晶体P3HT纳米线(NWS)。发现溶剂蒸汽退火(SVA)与氯仿(CF)对P3HT-NW嵌入的P3HT薄膜的结构和形态变化产生深刻影响。随着退火时间的增加,结晶P3HT NWS的密度在所得薄膜内增加,并且还显着改善了相应的膜的内分子间相互作用。结果,用CF蒸汽退火20分钟的P3HT-NW嵌入的P3HT薄膜导致最大化的电荷载流量〜0.102cm2V≤1s≤1的最大电荷载流子迁移率,其高于原始P3ht薄膜的4.4-折叠(μ=〜0.023cm 2V≤1s≤1)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号