首页> 美国卫生研究院文献>Polymers >Effects of Solvent Vapor Annealing on Morphology and Charge Transport of Poly(3-hexylthiophene) (P3HT) Films Incorporated with Preformed P3HT Nanowires
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Effects of Solvent Vapor Annealing on Morphology and Charge Transport of Poly(3-hexylthiophene) (P3HT) Films Incorporated with Preformed P3HT Nanowires

机译:溶剂蒸汽退火对掺入预制P3HT纳米线的聚(3-己基噻吩)(P3HT)膜的形貌和电荷传输的影响

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摘要

We systematically studied the influence of solvent vapor annealing on the molecular ordering, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) thin films embedded with preformed crystalline P3HT nanowires (NWs). Solvent vapor annealing (SVA) with chloroform (CF) was found to profoundly impact on the structural and morphological changes, and thus on the charge transport characteristics, of the P3HT-NW-embedded P3HT films. With increased annealing time, the density of crystalline P3HT NWs was increased within the resultant films, and also intra- and intermolecular interactions of the corresponding films were significantly improved. As a result, the P3HT-NW-embedded P3HT films annealed with CF vapor for 20 min resulted in a maximized charge carrier mobility of ~0.102 cm V s , which is higher than that of pristine P3HT films by 4.4-fold (μ = ~0.023 cm V s ).
机译:我们系统地研究了溶剂蒸气退火对嵌入预形成的结晶P3HT纳米线(NWs)的聚(3-己基噻吩)(P3HT)薄膜的分子有序,形态和电荷传输性能的影响。发现用氯仿(CF)进行的溶剂蒸气退火(SVA)对嵌入P3HT-NW的P3HT膜的结构和形态变化,进而对电荷传输特性产生深远影响。随着退火时间的增加,所得薄膜中晶体P3HT NW的密度增加,相应薄膜的分子内和分子间相互作用也得到显着改善。结果,用CF蒸气退火20分钟的嵌入P3HT-NW的P3HT薄膜产生的最大电荷载流子迁移率为〜0.102 cm V s,比原始P3HT薄膜高4.4倍(μ=〜 0.023 cm V s)。

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