Accumulation and annealing null of poly components ZrSnTi and the HfSnTi oxide thin film which use the non solvent liquid blend of the precursive

摘要

PROBLEM TO BE SOLVED: To deposit an oxide thin film of ZrSnTi or HfSnTi with a solvent less liquid mixture of a precursor.;SOLUTION: A film including a complex mixed metal can be deposited by means of CVD from liquid mixtures of metal complexes without solvent by a direct liquid implantation and by other precursor dispersion method such as an aerosol delivery. The method has a possibility of commercial success in producing a micro electronic device including a dielectric, a ferro-electric, a metal/electrode barrier, a superconductor, a catalyst and a protective coating. An application of the method, particularly thin films of ZnSnTiOx (zirconium-tin- titanate, namely ZTT) and HfSnTiOx (hafnium-tin-titanate, namely HTT) are well studied.;COPYRIGHT: (C)2001,JPO