Identification of Grown-In Defects in CZ Silicon after Cu Decoration

摘要

Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). The vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly defect-free ring, and self-interstitial-type rich outer ring were delineated in the Si crystal wafer. At the surface of the Si crystal, vertical style="font-family:Verdana;">- style="font-family:Verdana;">horizontal line (V style="font-family:Verdana;">- style="font-family:Verdana;">H line) defects and windmill defects (W-defects) were formed instead of OISF. The families of growth planes and directions were expressed as {011} and <110> for the V style="font-family:Verdana;">- style="font-family:Verdana;">H line and {010} and <010> for W style="font-family:Verdana;">- style="font-family:Verdana;">defects, respectively. In addition to V style="font-family:Verdana;">- style="font-family:Verdana;">H line defects and W-defects, pits or voids and Si oxide with dissolved Cu were found in the Si crystal wafer.