首页>外文会议>其他>Symposium on Crystalline defects and contamination: Their impact and control device manufacturing

Symposium on Crystalline defects and contamination: Their impact and control device manufacturing

召开年：
召开地：
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.New materials in future memories: high temperature behaviour of Sr Bi and Ir on silicon surfaces monitored by TXRF and Elymat

机译：未来回忆中的新材料：由TXRF和ILLYMAT监测的SR BI和IR的高温行为和IR硅表面
- 作者：G. Kilian;M. Rommel;W. Pamler;A. Hopfner
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
2.Implantation induced defects in silicon detected by Cu decoration technique

机译：Cu装饰技术检测硅中的植入诱导缺陷
- 作者：R. Kogler;A. Peeva;F. Eichhorn;J. Kaschny;M. Voelskow;W. Skorupa;H. Hutter
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
3.Measurement of organic contamination in microelectronics technology: standardization issues

机译：微电子技术有机污染的测量：标准化问题
- 作者：K. Budde;W. Holzapfel;A. Rohrig
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
4.Non destructive photothermal radiometric measurements of defects and metallic contaminating impurities on silicon wafers

机译：硅晶片上的缺陷和金属污染杂质的非破坏性光热辐射测量
- 作者：Constantinos;Christofides;Andreas Othonos;Kyriacos Kalli
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
5.Iron concentration mapping in monocrystalline silicon wafers

机译：单晶硅晶片中的铁浓度映射
- 作者：O. Palais;J. J. Simon;E. Yakimo;S. Martinuzzi
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
6.Local strain measurement synchrontron X-ray microbeam

机译：局部应变测量同步rotron X射线微波
- 作者：J. Matsui;Y. Tsusaka;K. Yokoyama;S. Takeda;M. Urakawa;Y. Kagoshima;S. Kimura
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
- Local strain;
- Synchrotron radiation;
- X-ray microbeam;
- SiO{sub}2 film;
- SOI;
7.Local Strain Measurement by Synchrotron X-ray Microbeam

机译：Synchrotron X射线Microbeam的局部应变测量
- 作者：J. Matsui;Y.Tsusaka;K. Yokoyama;S. Takeda;M. Urakawa;Kagoshima;S. Kimura
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
8.Monitoring carboxylic acids on the surface of silicon wafer

机译：在硅晶片表面上监测羧酸
- 作者：Thomas Ehmann;Laszlo Fabry;Ludwig Kotz;Siegfried Pahlke
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
9.Electrical characterization of thin SOI wafer

机译：薄SOI晶片的电学特性
- 作者：Seigo Kishino;Haruhiko Yoshida;Takayuki uchihashi
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
10.Radiation-induced defects in Ge-and Sn-doped n-type Si

机译：辐射诱导的Ge-and Sn-掺杂N型Si中的缺陷
- 作者：Arne Nyandsted Larsen
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
11.Control of crystalline defects in trench isolated thick film SOI for high voltage smart power ICs

机译：控制沟槽厚膜SOI中的晶体缺陷的控制高压智能电力IC
- 作者：X. Cao;D. Nicholson;W. A. Nevin;J. Knopke
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
12.Use of thermodynamical simulation to understand silicon/metal interactions and avoid metallic contamination during silicon wafer annealings

机译：热力学模拟的使用以了解硅/金属相互作用，避免硅晶片退火期间的金属污染
- 作者：P. Mur;A. Pishch;C. Chatillon;A. Tarnowka;M. N. Semeria
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
13.Electrical activity of silicide precipitates: experiment, simulation, mechanism

机译：硅化物沉淀物的电活动：实验，仿真，机制
- 作者：W. Schroter;V. Kveder;A. Sattler;H. Hedemann;T. Kietzke;F. Riedel
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
14.Proton-irradiation effect on the electric-field enhancement of the generation lifetime in shallow P-N junction diodes

机译：质子辐照对浅P-N结二极管中生成寿命的电场辐射影响
- 作者：A. Poyai;E. Simoen;C. Claeys;K. Hayama;K. Kobayashi;H. Ohyama
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
15.Integration of novel materials in CMOS technology: contamination aspects

机译：CMOS技术新型材料集成：污染方面
- 作者：Werner Pamler;Hocine Boubekeur
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
16.Point defects in silicon crystal growth

机译：硅晶体生长点缺陷
- 作者：V. V. Voronkov;R. Falster
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
17.Organic contamination on wafer surfaces: measurement techniques and deposition kinetics

机译：晶圆表面有机污染：测量技术和沉积动力学
- 作者：J. Bugler;G. Zielonka;L. Pfitzner;h. Ryssel;M. Schottler
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
18.Modeling of metal impurity gettering

机译：金属杂质吸气的建模
- 作者：A. A. Istratov;H. Hieslmair;E. R. Weber
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
19.Radiation-induced defects utilized for performance tailoring in high-power devices

机译：用于在大功率器件中剪裁的辐射诱导的缺陷
- 作者：F. -J. Niedernostheide;H. -J. Schulze;U. Kellner-Werdehausen;A. Frohnmeyer;G. Wachutak
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
20.Analysis of time dependent haze on silicon surfaces

机译：硅表面上依赖雾度的时间分析
- 作者：N. Munter;B. O. Kolbesen;W. Storm;T. Muller
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
21.The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies

机译：基材辐射诱导缺陷对深亚微米硅技术操作的影响
- 作者：E. Simoen;C. Cleys;A. Poyai
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
22.Detection of metal segregation at the oxide-silicon interface

机译：氧化硅界面的金属偏析检测
- 作者：M. L. Polignano;A. Giussani;D. Caputo;C. Clementi;G. Pavia;F. Priolo
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
23.Sims studies of Sr, Bi, and Ta diffusion from SBT in SiO_2

机译：SR，BI和STS中ST的SIMS研究SIO_2
- 作者：Ralf Bungener;Werner Pamler;Franz Jahnel;Birgit Weidinger;Uirch Gosele
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
24.Radiation-induced defects in Ge- and Sn-doped N-type Si

机译：辐射诱导的GE和SN掺杂N型SI中的缺陷
- 作者：Arne Nylandsted Larsen
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
25.Nondestructive photothermal radiometric measurements of defects and metallic contaminating impurities on silicon wafers

机译：无损光热辐射测量硅晶片上的缺陷和金属污染杂质
- 作者：Constantinos Christofides;Andreas Othonos;Kyriacos Kalli
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
26.Control of grown-in defects in nitrogen-doped CZ silicon crystal for new generation devices

机译：新一代器件中氮掺杂CZ硅晶体中成长缺陷的控制
- 作者：Masataka Hourai;Toshiaki Ono;Shigeru Umeno;Tadami Tanaka
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
27.Organic contamination: impact, characterization, sources and cleaning during IC manufacturing

机译：有机污染：IC制造期间的影响，表征，来源和清洁
- 作者：M. Claes;S. De Gendt
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
28.Metal contamination issues resulting from new Si processes

机译：新的SI流程产生的金属污染问题
- 作者：J. L. Benton;T. Boone;D. C. Jacobson;Wen Lin;G. D. Wilk;H. W. Krautter;J. M. Rosamilia;C. S. Rafferty
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
29.High resolution Laplace deep level transient spectroscopy a new tool to study implant damage in silicon

机译：高分辨率Laplace深度瞬态光谱通过硅研究植入物损坏的新工具
- 作者：A. R. Peaker;J. H. Evans-Freeman;L. Dobaczewski;V. Markevich;O. Andersen;L. Rubaldo;P. Y. Kan;I. D Hawkins;K. Goscinski;K. Bonde Nielsen
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
30.Defects in silicon crystals and their impact on device characteristics

机译：硅晶体中的缺陷及其对器件特性的影响
- 作者：E. Dornberger;D. Temmler;W. von Ammon
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
31.The role of nickel contamination in IC-fabrication on SOI-material

机译：镍污染在SOI材料上的IC制作中的作用
- 作者：I. Rink;A. Janssen;A. De Veirman;R. Zingg;t. Lavrijsen;Schoenmakers;P. Boos
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年
32.Hydrogen in silicon:present understanding and impact on devices

机译：硅中的氢：对设备的了解和影响
- 作者：J. Weber
- 会议名称：《Symposium on Crystalline defects and contamination: Their impact and control device manufacturing》 | 2001年