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Tailoring the structural and magnetic properties of masked CoPt thin films using ion implantation

机译:使用离子植入来定制遮罩COPT薄膜的结构和磁性

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The effects of ion implantations through a mask on the structural and magnetic properties of Cosub80/subPtsub20/sub films were investigated. The mask was patterned using the self-assembly of diblock copolymers. For implantation, high (40 keV for sup14/supNsup+/sup and 100 keV for sup40/supArsup+/sup) and low (7.5 keV for sup14/supNsup+/sup and 4.5 keV for sup40/supArsup+/sup) energy sup14/supNsup+/sup and sup40/supArsup+/sup ions were used to modify the structural and magnetic properties of these films. X-ray diffraction and TRIM simulations were performed for understanding the structural changes due to ion implantations. These results revealed the intermixing of Co atoms in lower layers and lattice expansion in Cosub80/subPtsub20/sub magnetic and Ru layers. A lateral straggling of Co caused an increase in the exchange coupling in the masked region. Depletion of Co atoms in Cosub80/subPtsub20/sub layer caused a decrease in the anisotropy constant, which were further confirmed by the alternating gradient force magnetometer and magnetic force microscopy results. The magnetic force microscopy images showed an increase in domain width and domain wall width confirming the above-mentioned effects.
机译:研究了离子注入通过掩模对CO 80 pt 20 膜的结构和磁性的影响。使用二嵌段共聚物的自组装图案化掩模。对于植入,高(40keV用于 14℃> + + 和100kev,用于 40 ar + )和低( 7.5 kev用于 14 n + 和4.5kev,用于 40 ar + )能量 14 n + 和 40 ar + 离子用于修饰这些薄膜的结构和磁性。进行X射线衍射和修剪模拟,以了解由于离子植入引起的结构变化。这些结果表明,在CO 80 pt 20 磁性和ru层中,在下层和晶格膨胀中的晶格膨胀混合。 CO的横向磨切导致掩蔽区域中的交换耦合的增加。 CO 80 pt 20 层中的共同原子耗尽导致各向异性常数的减少,通过交替的梯度力仪和磁力显微镜结果进一步证实。磁力显微镜图像显示域宽度和畴壁宽度的增加,确认了上述效果。

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