Influence of post-deposition selenization and cadmium chloride assisted grain enhancement on electronic properties of cadmium selenide thin films

摘要

We report on the growth, grain enhancement, doping, and electron mobility of cadmium selenide (CdSe) thin films deposited using the thermal evaporation method. The optical measurement shows CdSe is a direct bandgap material with an optical bandgap (Esubgap/sub) of 1.72 eV. CdSe thin films were deposited on fluorine doped tin oxide glass substrates with different thicknesses, and grain size and mobility were measured on the films. CdClsub2/sub was deposited on the films, and the films were subjected to high temperature treatment for several hours. It was found that both grain sizes increased significantly after CdClsub2/sub treatment. The mobility of electrons was measured using the space charge limited current technique, and it was found that the mobility increased significantly after CdClsub2/sub treatment. It was discovered that postdeposition selenization further improved the electrical properties of CdSe thin films by increasing the electron mobility-lifetime product and the photo/dark conductivity ratio. CdSe films after postselenization also showed significantly lower values for midgap states and Urbach energies for valence band tail states.