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Magnetic properties of permalloy antidot array fabricated by interference lithography

机译:干扰光刻制造的渗透磁铁阵列的磁性

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The magnetic properties of a Permalloy antidot array in square lattice geometry, with circular-rhomboidal hole shape and fabricated by interference laser lithography and ion-beam sputtering have been reported. Magneto-optical Kerr effect magnetometry indicated that the sample exhibits four-fold anisotropic behaviour, i.e. different magnetization loops were observed when the external magnetic field was applied along either x- or y-axis, or along the array diagonal. Broadband ferromagnetic resonance measurements revealed a rich variety of different magnetization configurations in the unsaturated state that can be controlled by the orientation of the external magnetic field. Micromagnetic simulations have been performed to explain the observed results. On the contrary, in the saturated regime the system demonstrated almost isotropic magnetic behaviour that improves with external field increase. The obtained results show the potential of interference lithography for the fabrication of large area antidot arrays.
机译:已经报道了方形晶格几何形状中的渗透二极管阵列的磁性,具有圆形菱形孔形状和由干扰激光光刻和离子束溅射制造的。磁光kerr效应磁体表明样品表现出四倍的各向异性行为,即当沿x-或y轴施加外部磁场或沿阵列对角线时观察到不同的磁化环。宽带铁磁共振测量显示在不饱和状态下揭示了丰富的不同磁化配置,其可以通过外部磁场的方向来控制。已经进行了微磁模拟以解释观察结果。相反,在饱和的制度中,系统表现出几乎各向同性的磁性行为,从外部场增加提高。所得结果表明了用于制造大面积反向阵列的干扰光刻的潜力。

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