Properties of Nitrogen/Silicon Doped Vertically Oriented Graphene Produced by ICP CVD Roll-to-Roll Technology

摘要

Simultaneous mass production of high quality vertically oriented graphene nanostructures and doping them by using an inductively coupled plasma chemical vapor deposition (ICP CVD) is a technological problem because little is understood about their growth mechanism over enlarged surfaces. We introduce a new method that combines the ICP CVD with roll-to-roll technology to enable the in-situ preparation of vertically oriented graphene by using propane as a precursor gas and nitrogen or silicon as dopants. This new technology enables preparation of vertically oriented graphene with distinct morphology and composition on a moving copper foil substrate at a lower cost. The technological parameters such as deposition time (1–30 min), gas partial pressure, composition of the gas mixture (propane, argon, nitrogen or silane), heating treatment (1–60 min) and temperature (350–500 °C) were varied to reveal the nanostructure growth, the evolution of its morphology and heteroatom’s intercalation by nitrogen or silicon. Unique nanostructures were examined by FE-SEM microscopy, Raman spectroscopy and energy dispersive X-Ray scattering techniques. The undoped and nitrogen- or silicon-doped nanostructures can be prepared with the full area coverage of the copper substrate on industrially manufactured surface defects. Longer deposition time (30 min, 450 °C) causes carbon amorphization and an increased fraction of sp 3 -hybridized carbon, leading to enlargement of vertically oriented carbonaceous nanostructures and growth of pillars.