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Investigation of temperature characteristics of UV-LEDs with different GaN/AlGaN heterostructures

机译:不同GaN / AlGaN异质结构的UV导向器温度特性研究

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ThequantumefficiencyofAlInGaN-basedLEDstructureswithdifferentactiveregionthicknessatdifferenttemperaturesandbiaseswasstudied.Thestronginfluenceofthethicknessoftheactiveregiononthecharacteristicsofthesampleswasobserved.Throughthedecreaseoftheactiveregionthicknessnotonlytheemissivepowerdwindledbutalsothermodynamicpropertiestendedtodeteriorateandlowtemperaturestabilityoftheactiveregionwasobserved.Itwasshownthatthedecreaseininternalquantumefficiencythroughtheincreaseofthecurrentdensitywascausedbychargeleakfromthequantumwell.TheheatingoftheactiveregionduetothehigherAugerrecombinationfrequencyledtotheshiftinthepeakwavelengthoftheemissionspectrumandloweremissionpower...
机译:ThequantumefficiencyofAlInGaN-basedLEDstructureswithdifferentactiveregionthicknessatdifferenttemperaturesandbiaseswasstudied.Thestronginfluenceofthethicknessoftheactiveregiononthecharacteristicsofthesampleswasobserved.Throughthedecreaseoftheactiveregionthicknessnotonlytheemissivepowerdwindledbutalsothermodynamicpropertiestendedtodeteriorateandlowtemperaturestabilityoftheactiveregionwasobserved.Itwasshownthatthedecreaseininternalquantumefficiencythroughtheincreaseofthecurrentdensitywascausedbychargeleakfromthequantumwell.TheheatingoftheactiveregionduetothehigherAugerrecombinationfrequencyledtotheshiftinthepeakwavelengthoftheemissionspectrumandloweremissionpower ...

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