Acetone Adsorption Characteristics of Pd/AlGaN/GaN Heterostructure Grown by PAMBE: A Kinetic Interpretation at Low Temperature

摘要

An AlGaN/GaN heterostructure based metal-semiconductor-metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate the kinetics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the nature of acetone adsorption-desorption.