Low-Temperature Electron Beam Deposition of Zn-SnO_x for Stable and Flexible Perovskite Solar Cells

摘要

Perovskite solar cells (PSCs) attract tremendous interest due to their feasibility,high power conversion efficiency (PCE), light weight, and flexible architecture.However, some challenges are still present for cheap mass fabrication incommercial applications. Herein, efficient Zn-SnO_x electron transport layers(ETLs) are used by the low-temperature (100 ℃) electron beam (E-beam) method.Doping Zn~(2+) in SnO_2 improves conductivity, suppresses charge recombination,and optimizes the energy level structure of SnO_2, leading to an improved PCEfrom 18.95% to 20.16%. More importantly, the PCE of the modified device ismore than 80% of its initial values for 800 h in ambient air with a relativehumidity of ≈40%. The flexible device exhibits a PCE of 15.25% and remains atan initial PCE of 83% after 100 bending cycles. The efficient and flexible PSCs arepotentially used as wearable energy power sources. The low-temperaturepreparation of ETL and the excellent performance of devices present greatcommercial potential for future applications.