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Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

机译:具有Taox的RRAM的垂直3D结构的侧壁电极氧化自定位切换区域

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A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective confinement of the switching region, the newly-proposed structure shows about two orders higher endurance (10(8) without verification operation) and better retention (180h@150?°C), as well as high uniformity. Corresponding model is put forward, on the base of which thorough theoretical analysis and calculations are conducted as well, demonstrating that, resulting from the physically-isolated switching from neighboring cells, the proposed structure exhibits dramatically improved reliability due to effective suppression of thermal effects and oxygen vacancies diffusion interference, indicating that this novel structure is very promising for future high density 3D RRAM application.
机译:提出了一种新型的垂直3D RRAM结构,其可靠性行为得到了极大的改善,并通过基本兼容的工艺进行了实验证明,该工艺具有通过侧壁电极氧化实现的自定位开关区域的功能。与常规结构相比,由于有效地限制了切换区域,因此新提出的结构显示出大约两个数量级的耐久性(> 10(8),无需验证操作)和更好的保持力(> 180h @ 150?C),以及高均匀度。提出了相应的模型,并在此模型的基础上进行了深入的理论分析和计算,证明了由于与相邻单元格的物理隔离切换,所提出的结构由于有效地抑制了热效应而显着提高了可靠性。氧空位扩散干扰,表明这种新颖的结构对于未来的高密度3D RRAM应用非常有前途。

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